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Plastic Medium Power Silicon NPN Transistor SEMICONDUCTOR TECHNICAL DATA MOTOROLA ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 7 Current Gain-Bandwidth Product (IC = 500 mAdc, VCE = 2 Vdc, f = 1.0 MHz) Base-Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) DC current Gain (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Total Device Dissipation @ TA = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Characteristic x 300 s, Duty Cycle x 2.0%. Symbol TJ, Tstg VCBO VCEO VEBO PD PD IC IB Symbol JC JA BD 165 BD 169 BD 165 BD 169 Type VCE(sat)* VBE(on)* Symbol BVCEO ICBO IEBO hFE* fT - 65 to + 150 6.25 Max 100 Value 1.25 8 20 160 0.5 1.5 45 80 45 80 5 BD 165 BD 169 BD 165 BD 169 Type Watts mW/_C Watt mW/_C _C/W _C/W Unit Unit Adc Adc Vdc Vdc _C Min 6.0 40 15 45 80 -- -- -- -- -- 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS BD165 BD169 CASE 77-08 TO-225AA TYPE 0.95 Max 0.5 1.0 0.1 0.1 -- -- -- -- -- Order this document by BD165/D mAdc mAdc MHz Unit Vdc Vdc Vdc 1 BD165 BD169 10 TJ = 150C PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 25 20 15 10 5 0 5.0 3.0 2.0 5.0 ms 1.0 0.5 0.3 0.2 0.1 5.0 SECOND BREAKDOWN dc LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C PULSE CURVES APPLY BELOW BD165 RATED VCEO BD169 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 100 s 1.0 ms 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) 160 Figure 1. PD - TC Derating Curve VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Safe Operating Area (see Note 1) 1.2 1 0.8 0.6 0.4 0.2 0 IC = 0.1 A 0.25 A 0.5 A 1A 1 5 10 50 100 IB, BASE CURRENT (mA) 500 1000 Figure 3. Collector Saturation Region 10 hFE , DC CURRENT GAIN, NORMALIZED 1 0.5 TJ = + 150C + 25C - 25C VOLTAGE (VOLTS) VBE(sat) at IC/IB = 10 0.1 0.05 VCE(sat) at IC/IB = 10 VCE = 2 V TJ = 25C 0.01 VBE at VCE = 2 V 1 0.1 0.01 0.05 0.1 IC, COLLECTOR CURRENT (A) 0.5 1 10 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 4. Current Gain Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 2 Figure 5. "On" Voltage The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Motorola Bipolar Power Transistor Device Data BD165 BD169 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 BD165 BD169 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *BD165/D* BD165/D |
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